ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process. A1 A C
B1
(Thin Extreme Super mini type with 5 pin. )
1
5
DIM A
A1 B
2
3
4
B1 C D H J P.
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SEMICONDUCTOR
TECHNICAL DATA
KRX102E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process.
A1 A C
B1
(Thin Extreme Super mini type with 5 pin.)
1
5
DIM A
A1 B
2
3
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5
C
EQUIVALENT CIRCUIT
Q1 R1 OUT Q2 R1 OUT Q1 R1=47KΩ R2=47KΩ Q2 R2 COMMON R2 COMMON R1=10KΩ R2=47KΩ
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5.
KRX102E Datasheet
