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KTA1001 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min. ) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max. ) (IC=-3A, IB=-75mA). High Power Dissipation. : PC=1W(Tc=25 ), PC=0.5W(Ta=25 ).

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Datasheet Details

Part number KTA1001
Manufacturer KEC
File Size 43.68 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA). High Power Dissipation. : PC=1W(Tc=25 ), PC=0.5W(Ta=25 ). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note1) Base Current VCBO VCEO VEBO IC ICP IB -35 -20 -8 -3 -5 -0.5 Collector Power Dissipation Ta=25 Tc=25 * PC 0.5 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note1 : Pulse Test : Pulse width=10ms(Max.) Duty cycle=30%(Max.) *Pc : KTA1001 mounted on ceramic substrate(250mm2x0.