Datasheet4U Logo Datasheet4U.com

KTA1241 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min. ) (VCE=-2V, IC=-4A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). High Power Dissipation : PC=1W.

📥 Download Datasheet

Datasheet Details

Part number KTA1241
Manufacturer KEC
File Size 316.94 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1241 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KTA1266 PNP Plastic Encapsulated Transistor SeCoS
KTA1266 PNP Plastic-Encapsulate Transistor WEITRON
KTA1266 PNP Transistors Kexin
KTA1266 Silicon PNP transistor BLUE ROCKET ELECTRONICS
KTA1267 Silicon PNP transistor BLUE ROCKET ELECTRONICS

Other Datasheets by KEC

Part Number Description
KTA1242D EPITAXIAL PLANAR PNP TRANSISTOR
KTA1242L EPITAXIAL PLANAR PNP TRANSISTOR
KTA1243 EPITAXIAL PLANAR PNP TRANSISTOR
KTA1204D EPITAXIAL PLANAR PNP TRANSISTOR
KTA1204L EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-4A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). High Power Dissipation : PC=1W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -20 -8 -5 -0.5 1 150 -55 150 UNIT V V V A A W O D KTA1241 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.