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SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES ᴌLow Noise.
: NF=3dB(Typ.), Rg=100ή, VCE=-6V, IC=-100ỌA, f=1kHz : NF=0.5dB(Typ.), Rg=1kή, VCE=-6V, IC=-100ỌA, f=1kHz. ᴌHigh DC Current Gain : hFE=200ᴕ700. ᴌHigh Voltage : VCEO=-120V. ᴌLow Pulse Noise. Low 1/f Noise. ᴌComplementary to KTC3200.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING -120 -120 -5 -100 100 625 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
L M
C
KTA1268
EPITAXIAL PLANAR PNP TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.