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SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTC3209.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
Storage Temperature Range
Tstg
RATING -50 -50 -5 -2 1 150
-55 150
UNIT V V V A W
O D
KTA1281
EPITAXIAL PLANAR PNP TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.
KTA1281 Datasheet
