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SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS.
FEATURES High breakdown voltage : VCEO 300V. Small reverse transfer capacitance and excellent high frequency characteristic. : Cre=2.3pF (VCB=30V, f=1MHz) Complementary KTC3503.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING -300 -300 -5 -100 -200 1.5 7 150
-55 150
UNIT V V V
mA
W
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.
KTA1381 Datasheet
