The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES High Voltage : VCEO=-120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC3911S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IB PC Tj
Storage Temperature Range
Tstg
RATING -120 -120 -5 -100 -20 150 150
-55 150
UNIT V V V mA mA mW
A G H
D
KTA1517
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
23 1
PP
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.