Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3542T.
Full PDF Text Transcription for KTA1542T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KTA1542T. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collecto...
View more extracted text
ES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3542T. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC * Tj -30 -30 -5 -3 -5 -600 0.9 150 Storage Temperature Range Tstg -55 150 * Package mounted on a ceramic board (600 0.