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KTA1807L - EPITAXIAL PLANAR PNP TRANSISTOR

Download the KTA1807L datasheet PDF. This datasheet also covers the KTA1807D variant, as both devices belong to the same epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KTA1807D-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KTA1807L
Manufacturer KEC
File Size 401.55 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1807L Datasheet

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Other Datasheets by KEC

Part Number Description
KTA1807D EPITAXIAL PLANAR PNP TRANSISTOR
KTA1834D EPITAXIAL PLANAR PNP TRANSISTOR
KTA1834L EPITAXIAL PLANAR PNP TRANSISTOR
KTA1837 EPITAXIAL PLANAR PNP TRANSISTOR
KTA1862D EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse * Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50%. VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -600 -600 -7 -1.0 -2.0 1.0 150 -55 150 UNIT V V V A W Q KTA1807D/L TRIPLE DIFFUSED PNP TRANSISTOR A C H FF 123 1. BASE 2. COLLECTOR 3.