KEC KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
| Part No. | KTB1124 |
|---|---|
| Datasheet | KTB1124 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PC* Tj -60 -50 -6 -3 -6 -600 500 1 150 Storage Temperature Range Tstg -55 150 * : Package mounted on ceramic substrate(250mm2 0.8t) UNIT V V V A A mA mW WELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO VCB=-40V, IE=0 IEBO VEB=-4V, IC=0 hFE(1) (Note) VCE=-2V, IC=-100 hFE (2) VCE=-2V, IC=-3A VCE(sat) IC=-2A, IB=-100 VBE(s...
