KTB1124 - EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Key Features

Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124.

KTB1124 epitaxial planar pnp transistor by KEC - Datasheet Preview

Datasheet Details

Part number	KTB1124
Manufacturer	KEC
File Size	517.11 KB
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet	KTB1124 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
KTB1124	PNP Silicon Epitaxial Planar Transistor	GME
KTB1124	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
KTB1366	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
KTB1366	PNP Transistor	JCET
KTB1366	Silicon PNP Power Transistors	Inchange Semiconductor

Other Datasheets by KEC

Part Number	Description
KTB1151	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1234T	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1241	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1260	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1366	TRIPLE DIFFUSED PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PC* Tj -60 -50 -6 -3 -6 -600 500 1 150 Storage Temperature Range Tstg -55 150 * : Package mounted on ceramic substrate(250mm2 0.