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SEMICONDUCTOR
TECHNICAL DATA
KTB1370
TRIPLE DIFFUSED PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES High Collector Current : IC=-7A. Low Collector-Emitter Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-4A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature
VCBO VCEO VEBO
IC IB PC Tj
Storage Temperature Range
Tstg
RATING -100 -80 -5 -7 -1 30 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.
KTB1370 Datasheet
