The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
DC Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg
RATING -120 -120 -5 -10 -15 -1 80 150
-55 150
UNIT V V V
A
A W
L
BE
KTB778
TRIPLE DIFFUSED PNP TRANSISTOR
DIM MILLIMETERS
A U
C R
WW
A B C D
16.30 MAX 12.00+_ 0.30 5.50+_ 0.20
1.20 MAX
GF
E 8.00 V F 5.00
G 17.00+_ 0.30
H 0.60+0.15/-0.10
S T
I 2.50
M
K N
I
J 20.0+_ 0.1 K 4.00
J
D L 2.00
M 2.20 MAX
N 3.05 MAX
HO
5.45
OO
P 3.
KTB778 Datasheet
