KEC KTC1003
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Large Collector Current Capability. Large Collector Power Dissipation Capability.MAXIMUM RATINGS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 200 60 5 4 10 1 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220ISELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) Transition Frequency fT TEST CONDITION VCB=170V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=0.4A IC=4A, IB=0.4A VCE=5V, IC=0.5A MIN.