Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
Features
ᴌLow Collector-Emitter Saturation Voltage
: VCE(sat)=2.0V(Max.). ᴌplementary to KTA1049.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 100 100 5 5 0.5 30 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
M DD
NN T
GF B P
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX
E Ѹ3.20Ź0.20 F 3.00Ź0.30
G 12.30 MAX
0.75...