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SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1715.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
VCBO VCEO VEBO
IC IE
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 50 50 5 2 -2 1.5 10 150
-55 150
UNIT V V V A A
W
KTC2814
EPITAXIAL PLANAR NPN TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3 2.9 MAX
1.0 MAX 1.