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KTC2825D - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

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Datasheet Details

Part number KTC2825D
Manufacturer KEC
File Size 57.19 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC2825D Datasheet

Full PDF Text Transcription for KTC2825D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC2825D. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA KTC2825D EPITAXIAL PLANAR NPN TRANSISTOR LED DRIVE APPLICATION FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation volta...

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Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature Ta=25 TC=25 Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg RATING 60 60 6 3 6 600 1 15 150 -55 150 UNIT V V V A A mA W W A C M G FF 123 E BD H K J DIM MILLIMETERS A 6.6 +_0.2 B 6.1+_ 0.2 C 5.0 +_ 0.2 D 1.1+_ 0.2 E 2.7 +_ 0.2 F 2.3+_ 0.1 G 1.0 MAX N H J 2.3+_ 0.2 0.5+_ 0.1 K 1.0+_ 0.1 L LM 0.5+_

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