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KTC3535T - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • ᴌAdoption of MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh Speed Switching. ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1535T.

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Datasheet Details

Part number KTC3535T
Manufacturer KEC
File Size 82.90 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3535T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. FEATURES ᴌAdoption of MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh Speed Switching. ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1535T MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 20 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO 5 Collector Current DC Pulse IC ICP 3 5 Base Current IB 600 Collector Power Dissipation PC * 0.9 Junction Temperature Tj 150 Storage Temperature Range Tstg -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.