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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
C
KTC3964
EPITAXIAL PLANAR NPN TRANSISTOR
A B D E F
FEATURES
High DC current gain : hFE = 500(min) (IC=400mA) Low Collector emitter saturation voltage : VCE(sat)=0.5V(max) (IC=300mA)
H J K
G
L
M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 40 7 2 1.5 150 -55 150 UNIT V V V A W
N 1 2 3
O
P
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.
KTC3964 Datasheet
