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SEMICONDUCTOR
TECHNICAL DATA
KTC4511
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTA1725.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 80 80 6 6 3 30 150
-55 150
UNIT V V V A A W
A
C
U E
G
K
L
L
M
D
D
NN
T
T
123
O
F
Q
J
B
P
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C
2.70 0.30
S
D
0.85 MAX
E
3.20 0.20
F
3.00 0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60 0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50 0.20
P
6.80
Q
2.60 0.20
H
R
10
S
25
T
5
U
0.5
V 2.60 0.15
1.
KTC4511 Datasheet
