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SEMICONDUCTOR
TECHNICAL DATA
KTC5103D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.3W(Ta=25 Complementary to KTA1385D/L
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse *
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING 60 60 7 5 8 1 1.0 15 150
-55 150
UNIT V V V
A
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.
KTC5103L Datasheet
