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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌHigh Current. ᴌLow VCE(sat) .
: VCE(sat)ᴪ250mV at IC=200mA/IB=10mA. ᴌComplementary to KTA702E.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Single pulse Pw=1mS. * Total Rating.
VCBO VCEO VEBO
IC ICP (Note)
PC * Tj Tstg
RATING 15 12 6 500 1 200 150
-55ᴕ150
UNIT V V V mA A mW ᴱ ᴱ
A
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
C
A1
B B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
D
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
C
H
J
1.
KTC802E Datasheet
