Full PDF Text Transcription for KTC802E (Reference)
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KTC802E. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌHigh Current. ᴌLow VCE(sat) . : VCE(sat)ᴪ250mV at IC=200mA/IB=10mA. ᴌComplement...
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ent. ᴌLow VCE(sat) . : VCE(sat)ᴪ250mV at IC=200mA/IB=10mA. ᴌComplementary to KTA702E. MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Single pulse Pw=1mS. * Total Rating. VCBO VCEO VEBO IC ICP (Note) PC * Tj Tstg RATING 15 12 6 500 1 200 150 -55ᴕ150 UNIT V V V mA A mW ᴱ ᴱ A KTC802E EPITAXIAL PLANAR NPN TRANSISTOR C A1 B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 2 5 A1 1.0 +_ 0.05 B 1.6+_ 0.05 B1 1.2 +_ 0.05 D 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 P J 0.12+_ 0.05 P