KEC KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.). L KTC9018S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 1 P P N C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC * Tj Tstg 40 30 4 20 -20 350 150 -55 150 0.6 ) V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR K CHARACTERISTIC SYMBOL RATING UNIT M SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 Marking h FE Rank Lot No. Type Name BGELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain Note : hFE Classification F:54 80, G:72 SYMBOL ICBO IEBO hFE (Note) Cre fT CC rbb' NF Gpe 108, H:97 TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz VCE=6V, IE=-1mA, f=100MHz 146, I:130 198 MIN.