The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
KTD1413
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature
VCBO VCEO VEB0
IC IB PC Tj
Storage Temperature Range
Tstg
RATING 150 100 7 5 0.5 25 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.
KTD1413 Datasheet
