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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IE PC PC* Tj
Storage Temperature Range
Tstg
* Mounted on ceramic substrate (250mm2 0.8t)
RATING 100 80 5 1 -1 500 1 150
-55 150
UNIT V V V A A mW W
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
A C
H G
B
E
J
D
D
K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN
0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3.
KTD1898 Datasheet
