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SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY / HIGH FREQUENCY AMPLIFIER APPLICATION
FEATURES Low Gain Controlled Amplifier High Transter Admittance
Maximum Ratings (Ta=25 ) CHARACTERISTIC
Gate-Drain Voltage Gate-Source Voltage Gate Current Drain Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDO VGSO IG ID PD Tj Tstg
RATING -22 -22 10 50 150 150
-55~150
UNIT V V mA mA mW
A G H
D
KTK951S
N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
E L BL
23 1
PP
M 1. SOURCE 2. DRAIN 3. GATE
DIM A B C D E G H J K L
M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20 1.90 0.95
0.13+0.10/-0.05
0.00 ~ 0.10 0.55
0.20 MIN 1.00+0.20/-0.10
7
SOT-23
C N K J
Marking
IDSS Rank
Type Name
J
Lot No.
KTK951S Datasheet
