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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
KTX403U
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
EQUIVALENT CIRCUIT (TOP VIEW)
MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range
DIODE (SBD) D1 CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range
2008. 8.