Datasheet4U Logo Datasheet4U.com

KTX811T - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • One NPN Transistor (Q1) Two Switching Diode (D1, D2) Low Saturation Voltage : VCE(sat) = 0.25V(Max)@ IC = 100mA, IB = 10mA Suffix U : Qualified to AEC-Q101. ex) KTX811T-RTK/HU.

📥 Download Datasheet

Datasheet preview – KTX811T

Datasheet Details

Part number KTX811T
Manufacturer KEC
File Size 50.88 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTX811T Datasheet
Additional preview pages of the KTX811T datasheet.

📁 Similar Datasheet

Other Datasheets by KEC
  • KTX101E - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX101U - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX102E - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX102U - EPITAXIAL PLANAR PNP/NPN TRANSISTOR
  • KTX103E - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX111T - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX201E - EPITAXIAL PLANAR NPN/PNP TRANSISTOR
  • KTX201U - EPITAXIAL PLANAR PNP/NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA TV Control board Application FEATURES One NPN Transistor (Q1) Two Switching Diode (D1, D2) Low Saturation Voltage : VCE(sat) = 0.25V(Max)@ IC = 100mA, IB = 10mA Suffix U : Qualified to AEC-Q101. ex) KTX811T-RTK/HU EQUIVALENT CIRCUIT (TOP VIEW) 654 D2 Q1 D1 Marking 654 Lot No. Type Name T8 123 123 MAXIMUM RATING (Ta=25 ) TRANSISTOR CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current DIODE CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (100 ) COMMON CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * : Package mounted on a ceramic board (600mm2 0.
Published: |