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KU2751K - N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converter.

Key Features

  • VDSS=30V, ID=52A. Low Drain to Source On-state Resistance. : RDS(ON)=11m.
  • : RDS(ON)=15m.
  • (Max. ) @ VGS=10V (Max. ) @ VGS=4.5V D1 H E2 E1 K L 1 A C DIM A b C D D1 E E1 E2 e H.

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Datasheet Details

Part number KU2751K
Manufacturer KEC
File Size 95.11 KB
Description N-Ch Trench MOSFET
Datasheet download datasheet KU2751K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description 5 KU2751K N-Ch Trench MOSFET L1 4 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. D e 8 1 b E FEATURES VDSS=30V, ID=52A. Low Drain to Source On-state Resistance. : RDS(ON)=11m§ : RDS(ON)=15m§ (Max.) @ VGS=10V (Max.) @ VGS=4.5V D1 H E2 E1 K L 1 A C DIM A b C D D1 E E1 E2 e H MILLIMETERS 8 5 4 K L L1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 52 A 208 170 54 W 2.5 150 -55 150 2.3 50 /W /W mJ UNIT V V 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain _ 0.10 1.00 + 0.41+0.10/-0.