KEC MJE13005DC
TRIPLE DIFFUSED NPN TRANSISTOR
APPLICATIONS
. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 700 400 10 5 10 2 75 150 -55 150 V V V A A W MJE13005DC TRIPLE DIFFUSED NPN TRANSISTORELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Emitter Cut-off Current DC Current Gain IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time VBE(sat) Cob fT ton TEST CONDITION VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz VCE=10V, IC=0.5A Storage Time tstg Fall Time Diode Forward Voltage tf VF *Reverse recovery tims (di/dt=10A/ S) trr *Pulse Test : Pulse Width = 5mS, Duty cycles 10% IF=2A IF=0.4A IF=1A IF=2A 2015.