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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.
B
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N K D E G
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING 30 30 10 500 625 150 -55ᴕ150 UNIT V V
M
H
F
F
V mA mW ᴱ ᴱ
L
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3.
MPSA13 Datasheet
