APPLICATIONS
. FEATURES
ᴌComplementary to MPSA06. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5 -500 500 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C MPSA56 EPITAXIAL PLANAR PNP TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO ICEO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE fT TEST CONDITION VCB=-80V, IE=0 VCE=-60V, IB=0 IC=-1mA, IB=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IE=0, IC=-100mA MIN. -80 100 100 50 TYP. - MAX. -100 -100 -0.25 -1.2 - UNIT nA nA V V V MHz 1998.
KEC