The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.
B
MPSA62/63/64
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
A
ᴌComplementary to MPSA13/14.
N K E G
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MPSA62 MPSA63/64 MPSA62 MPSA63/64
SYMBOL VCBO
RATING -20 -30 -20 -30 -10 -500 625 150 -55ᴕ150
UNIT V
F
H
F
L
M
C
VCES VEBO IC PC Tj Tstg
V V mA mW ᴱ ᴱ
1
2
3
J
MAXIMUM RATING (Ta=25ᴱ)
D
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
www.DataSheet4U.
MPSA62 Datasheet
