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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌComplementary to KTC3210.
KTA1282
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
A
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg
RATING -30 -30 -5 -2 2 625 150
-55ᴕ150
UNIT V V V A A mW ᴱ ᴱ
L M
C
K
E G
D
H
F
F
1 23
J
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER 2. COLLECTOR 3.
TA1282N Datasheet
