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SEMICONDUCTOR
TECHNICAL DATA
TIP122
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES ᴌHigh DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pules
Base Current
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
VCBO VCEO VEB0
IC ICP IB
PC
Tj
Storage Temperature Range
Tstg
RATING 100 100 5 5 8 0.12
65
150 -55ᴕ150
UNIT V V V
A
A W
ᴱ ᴱ
E Q
H
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.
TIP122 Datasheet
