KEC Z02W100V
ZENER DIODE
FEATURES
Small Package : SOT-23 Sharp breakdown characteristic. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature SYMBOL PD Tj Tstg Topr RATING 200 150 -55 150 -55 150 UNIT mW Z02W100V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. NC 2. ANODE 3. CATHODE 3 21 SOT-23 Marking 10AType Name Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Zener Voltage Dynamic Impedan (Note1) (Note2) VZ IZ=1mA ZZ IZ=1mA Reverse Current IR VR=76V (Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal. MIN. 95. 0 - TYP. - MAX. 105. 0 700 0.2 UNIT V A 2007. 2. 21 Revision No : 0 1/2 REVERSE SURGE POWER DISSIPATION PZSM (W) Z02W100V PZSM PZSM - tw 1K Ta=25 C Repetitive 100 tr 10 1 1µ 10µ 100µ 1m 10m 100m PULSE WIDTH TIME tW (S) IZ - VZ 10m Ta=25 C TYP.