KDF8205T Datasheet | KEDA

Features 20V,6A,Rds(on)<37.5mΩ@Vgs=2.5V 20V,6A,Rds(on)<27.5mΩ@Vgs=4.5V Fast Switching Surface Mount Package Ideal for Li Ion Battery Pack Applications General Description This Power MOSFET is produced using KEDA’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as Li Ion Battery, DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ TJ TSTG Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance,...