KDG40R12KT3 Description
VCES Collector-Emitter Blocking Voltage VGES IC ICM(1) tSC PD Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC = 80℃ TC = 25℃ TJ = 150℃ TJ = 150℃ TC = 25℃.
KDG40R12KT3 Key Features
- IGBT Inverter Short Circuit Rated 10μs
- IGBT Inverter Low Saturation Voltage
- Low Switching Loss
- Low Stray Inductance
- Lead Free, pliant With RoHS Requirement