VCES
Collector-Emitter Blocking Voltage
VGES
IC
ICM(1) tSC PD
Gate-Emitter Voltage
Continuous Collector Current
Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT)
TC = 80℃
TC = 25℃
TJ = 150℃
TJ = 150℃ TC = 25℃ TJmax=150℃
Internal Circuit Diagram
Val
Key Features
IGBT Inverter Short Circuit Rated 10μs.
IGBT Inverter Low Saturation Voltage.
Low Switching Loss.
Low Stray Inductance.
Lead Free, Compliant With RoHS Requirement
KDG40R12KT3.
Full PDF Text Transcription for KDG40R12KT3 (Reference)
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KDG40R12KT3 IGBT Module Features: IGBT Inverter Short Circuit Rated 10μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free,...
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ation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement KDG40R12KT3 Applications: Industrial Inverters Servo Applications IGBT-Inverter Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description VCES Collector-Emitter Blocking Voltage VGES IC ICM(1) tSC PD Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC = 80℃ TC = 25℃ TJ = 150℃ TJ = 150℃ TC = 25℃ TJmax=150℃ Internal Circuit Diagram Value 1200 ±20 40 80 80 >10 255 Units V V A A A μs W Characteristic Va