Kexin Electronics BCW60D
NPN General Purpose Transistors
FEATURES
NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC Pc Tstg Rating 32 32 5 100 350 150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 1 SMD Type BCW60A/B/C/DELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cutoff current BCW60B BCW60C BCW60D BCW60A BCW60B DC Current Gain BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D Collector-Emitter Saturation Voltage VCE(sat) IC = 50 mA; IB = 1.25 mA IC = 10 mA; IB = 0.25 mA Base to emitter saturation voltage Base to emitter voltage Collector capacitance Transition frequency Noise figure Turn On Time Turn Off Time VBE(sat) VBE(...