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KI4464DY - MOSFET

Features

  • PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 70 Pulsed Drain Current Single Avalanch Current Single Avalanch Energy L = 0.1 mH L = 0.1 mH IDM IAS EAS IS PD TJ, Tstg 2.1 2.5 1.6 -55 to 150 Symbol VDS VGS ID 2.2 1.7 8 3 0.45 1.2 1.5 0.9 mJ A W 10 secs 200 20 1.7 1.3 A Steady State Unit V Continuous Source Current ( Diode Conduction).
  • Maximum.

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Datasheet Details

Part number KI4464DY
Manufacturer KEXIN
File Size 79.14 KB
Description MOSFET
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www.DataSheet4U.com SMD Type N-Channel 200-V (D-S) MOSFET KI4464DY IC IC Features PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 70 Pulsed Drain Current Single Avalanch Current Single Avalanch Energy L = 0.1 mH L = 0.1 mH IDM IAS EAS IS PD TJ, Tstg 2.1 2.5 1.6 -55 to 150 Symbol VDS VGS ID 2.2 1.7 8 3 0.45 1.2 1.5 0.9 mJ A W 10 secs 200 20 1.7 1.3 A Steady State Unit V Continuous Source Current ( Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 www.DataSheet4U.
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