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KI4500BDY - MOSFET

Features

  • TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 (TJ = 150 ).
  • Pulsed Drain Current Continuous Source Current (Diode Conduction).
  • Maximum Power Dissipation.
  • TA = 25 TA = 70 Operating Junction and Storage Temperature Range.
  • Surface Mounted on FR4 Board;t 10 sec TJ, Tstg TA = 70 IDM IS PD 2.1 2.5 1.6 Symbol VDS VGS ID 9.1 7.3 30 1.1 1.3 0.8 -2.1 2.5 1.6 -55 to 150 N-Channel 10 sec Steady Stat.

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Datasheet Details

Part number KI4500BDY
Manufacturer KEXIN
File Size 87.14 KB
Description MOSFET
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www.DataSheet4U.com SMD Type Transistors IC Complementary MOSFET Half-Bridge (N- and P-Channel) KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 (TJ = 150 )* Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec TJ, Tstg TA = 70 IDM IS PD 2.1 2.5 1.6 Symbol VDS VGS ID 9.1 7.3 30 1.1 1.3 0.8 -2.1 2.5 1.6 -55 to 150 N-Channel 10 sec Steady State 20 12 6.6 5.3 ?5.3 -4.9 -20 -1.1 1.3 0.8 P-Channel 10 sec Steady State -20 12 -3.8 -3.
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