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SMD Type
Dual P-Channel 30-V (D-S) MOSFET KI4923DY
IC IC
Features
TrenchFET Power MOSFETS Advanced High Cell Density Process
1: Source 1 2: Gate 1 7,8: Drain 1
3: Source 2 4: Gate 2 5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 45 85 26 )* TA = 25 TA = 70 IDM IS PD -1.7 2 1.3 -55 to 150 Max 62.5 110 35 /W Unit Symbol VDS VGS ID -8.3 -6.6 -30 -0.9 1.1 0.7 W 10 secs Steady State -30 20 -6.
KI4923DY Datasheet
