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28N50H - N-CHANNEL MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using KIA advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • RDS(on)=0.17Ω @ VGS=10V.
  • Low gate charge ( typical 102nC).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA.

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Datasheet preview – 28N50H

Datasheet Details

Part number 28N50H
Manufacturer KIA
File Size 489.59 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 28N50H Datasheet
Additional preview pages of the 28N50H datasheet.

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    KIA 28A，500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. . 2. Features  RDS(on)=0.17Ω @ VGS=10V  Low gate charge ( typical 102nC)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.
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