KIA 3308A
N-CHANNEL MOSFET
FEATURES
n RDS(ON)=6.2mΩ@VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2.APPLICATIONS
n Power supply n DC-DC converters 3. Pin configuration 3308A Pin Function 1 Gate 2 Drain 3 Source 1 of 7 Rev 1.2 .Nov. 2017 KIA SEMICONDUCTORS 80A,80V N-CHANNEL MOSFET 3308A 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Pulse drain current Avalanche current Avalanche energy TC=25 ºC TC=100 ºC TC=25 ºC VDSS VGSS ID3 IDP4 IAS5 EAS5 TC=25 ºC Maximum power dissipation PD TC=100 ºC Junction & storage temperature range TJ,TSTG *Drain current limited by maximum junction temperature. Maximum TO-252 TO-263 TO-247 80 +25 80* 80 80 70* 70 70 340 20 410 120 240 288 60 100 144 -55~175 Units V V A A A A mJ W W ºC 5. Thermal characteristics Parameter Thermal resistance-junction to case Thermal resistance-junction to ambient Symbol Rθjc Rθja TO-252 1.04 Typical TO-263 0.52 55 TO-247 0.44 Units ºC/W 2 of 7 Rev 1.2 Nov.