3308A
Features n RDS(ON)=6.2mΩ@VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current
2. Applications n Power supply n DC-DC converters
3. Pin configuration
Pin
Function
Gate
Drain
Source
1 of 7
Rev 1.2 .Nov. 2017
SEMICONDUCTORS
80A，80V N-CHANNEL MOSFET
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage Gate-source voltage
Continuous drain current
Pulse drain current Avalanche current Avalanche energy
TC=25 ºC TC=100 ºC TC=25 ºC
VDSS VGSS
ID3
IDP4 IAS5 EAS5
TC=25 ºC
Maximum power dissipation
TC=100 ºC
Junction & storage temperature range
TJ,TSTG
- Drain current limited by maximum junction temperature.
Maximum TO-252 TO-263 TO-247
+25
80-
70-...
