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KEL-3001A - Infrared Emitting Diodes(GaAs)

Features

  • 940nm wavelength.
  • Low forward voltage.
  • High power and high reliability.
  • Available for pulse operating.

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Datasheet Details

Part number KEL-3001A
Manufacturer KODENSHI KOREA CORP
File Size 147.57 KB
Description Infrared Emitting Diodes(GaAs)
Datasheet download datasheet KEL-3001A Datasheet

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Full PDF Text Transcription

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Infrared Emitting Diodes(GaAs) KEL-3001A DIMENSIONS The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. (Unit : mm) FEATURES • 940nm wavelength • Low forward voltage • High power and high reliability • Available for pulse operating APPLICATIONS • IR Audio and Telephone • Communication • Optical Switch • Available for wireless digital data transmission ABSOLUTE MAXIMUM RATINGS Item Power dissipation Forward current Pulse forward current *1 Reverse voltage Operating temp. Storage temp. Soldering temp. *2 (Ta=25°C) Symbol PD IF IFP VR Topr. Tstg. Tsol.
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