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KEM5001R - Infrared Emitting Diode

General Description

ANODE CATHODE High power and high reliability Available for pulse operating Surface Mountable Leadless Package Applications IR Audio and Telephone IR Communication Optical Switch Available for Wireless Digital Data Transmission Absolute Maximum Ratings Parameter Power Dissipation Forward Current

Key Features

  • 0.70 3.70±0.1 870nm wavelength Low forward voltage 2.50 2.60.
  • PIN.

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Datasheet Details

Part number KEM5001R
Manufacturer KODENSHI KOREA
File Size 250.97 KB
Description Infrared Emitting Diode
Datasheet download datasheet KEM5001R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Emitting Diode(GaAlAs) KEM5001R The KEM5001R is GaAlAs infrared emitting diode that is designed for high power, low forward voltage. at emission wavelength 870nm and has a high radiant efficiency over a wide range of forward current. www.DataSheet4U.com 1.15 Dimensions [Unit : mm] This device is optimized for speed and efficiency 0.085 0.45 Features 0.70 3.70±0.1 870nm wavelength Low forward voltage 2.50 2.