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SJMN04A65D - N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • Drain-Source voltage: VDS=700V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.83Ω (Typ. ).
  • Ultra low gate charge: Qg=10nC (Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN04A65D SJMN04A65 TO-252 D G S TO-252 Marking Information SJMN 04A65 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise.

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Datasheet Details

Part number SJMN04A65D
Manufacturer KODENSHI KOREA
File Size 425.68 KB
Description N-Channel Super Junction MOSFET
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SJMN04A65D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.83Ω (Typ.)  Ultra low gate charge: Qg=10nC (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN04A65D SJMN04A65 TO-252 D G S TO-252 Marking Information SJMN 04A65 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.
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