SJMN05S60FD Overview
SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET.
SJMN05S60FD Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)
- Ultra low gate charge: Qg=7nC(Typ.)
- RoHS pliant device
- 100% avalanche tested