Download SJMN05S60FD Datasheet PDF
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SJMN05S60FD Key Features

  • Drain-Source voltage: VDS=650V (@TJ=150C)
  • Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)
  • Ultra low gate charge: Qg=7nC(Typ.)
  • RoHS pliant device
  • 100% avalanche tested

SJMN05S60FD Description

SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET.