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SJMN05S60FD - N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • Drain-Source voltage: VDS=650V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.7Ω (Typ. ).
  • Ultra low gate charge: Qg=7nC(Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN05S60FD SJMN05S60 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SJ◎M△NΔ0YY5MSMD6DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e. g. ) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Mont.

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Datasheet Details

Part number SJMN05S60FD
Manufacturer KODENSHI KOREA
File Size 550.52 KB
Description N-Channel Super Junction MOSFET
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SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)  Ultra low gate charge: Qg=7nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN05S60FD SJMN05S60 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SJ◎M△NΔ0YY5MSMD6DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -.
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