SJMN07A60FD Overview
SJMN07A60FD Super Junction MOSFET N-Channel Super Junction MOSFET.
SJMN07A60FD Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.51 (Typ.)
- Ultra low gate charge: Qg=15nC (Typ.)
- RoHS pliant device
- 100% avalanche tested