Download SJMN07S65FD Datasheet PDF
SJMN07S65FD page 2
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SJMN07S65FD Key Features

  • Drain- Source voltage: VDS=700V (@TJ=150C)
  • Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)
  • Ultra low gate charge: Qg=8nC(Typ.)
  • RoHS pliant device
  • 100% avalanche tested