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SJMN11A60D - N-Channel Super Junction MOSFET

Features

  • Drain-Source voltage: VDS=650V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.3Ω (Typ. ).
  • Ultra low gate charge: Qg=23nC (Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A60D SJMN11A60 TO-252 D G S TO-252 Marking Information SJMN 11A60 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise n.

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Datasheet Details

Part number SJMN11A60D
Manufacturer KODENSHI KOREA
File Size 321.43 KB
Description N-Channel Super Junction MOSFET
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SJMN11A60D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.3Ω (Typ.)  Ultra low gate charge: Qg=23nC (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN11A60D SJMN11A60 TO-252 D G S TO-252 Marking Information SJMN 11A60 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.
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