SJMN11A60D Overview
SJMN11A60D Super Junction MOSFET N-Channel Super Junction MOSFET.
SJMN11A60D Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.3Ω (Typ.)
- Ultra low gate charge: Qg=23nC (Typ.)
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code -. WW : Week Code